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SeongHwan Cho

2-2-1 Project Director

Project : Development of low-power sensors and sensor interfaces
Purpose The goal of this project is to develop low-power sensors and sensor interfaces. Specifically, research will be done on standard CMOS-processed humidity sensors and temperature sensors that will not need post-process calibration. These sensors will be used with sensor-specific interfaces developed to be compatible with NFC, Zigbee, and other smartphone platforms.
Contents During this project, research will be done on standard CMOS-based temperature and humidity sensors, along with the corresponding sensor interfaces. During the first year of research, the principles behind the sensors will be identified and validated and the necessary IP blocks behind the sensor interfaces will be designed. By the second year, testable temperature/humidity sensors will be designed and developed, and the IP blocks developed for the sensors interfaces will be improved by optimization. During the third year of research, performance measurements on the temperature/humidity sensors and IP blocks for the sensor interfaces will be carried out. During this period, appropriate calibration and compensation will be completed as well. The final step will involve research on possible sensor and interface improvements to minimize the need for corrections in the future, while also conducting research on aging and packaging possibilities to increase the lifetime of the sensor processes.
Expected Contribution The current sensor market share of domestic companies is only 23%, and due to this dearth of market share, companies are forced to look for products from abroad. Furthermore, the lack of innovation and technology in sensor-based technology firms results in sensor technology that is 65% compared to that of more developed countries. There is also a lack of skill in signal processing, an area crucial to the development of high-performance sensors. Through this study, new and original technology on standard CMOS-based temperature and humidity sensors will be researched and developed. The innovative sensors will be cheap and very effective, a characteristic that will propel itself to the international sensors market.
Publication
No Title Year Phase
4 A 9 bit, 1.12 ps Resolution 2.5 b/Stage Pipelined Time-to-Digital Converter in 65 nm CMOS Using Time-Register 2014.04. Phase 2
1st year
3 A 7b, 3.75ps resolution two-step time-to-digital converter in 65nm CMOS using pulse-train time amplifier 2013.04 Phase 1
2nd year
2 A 14.2mW 2.55-to-3GHz Cascaded PLL with Reference Injection and 800MHz Delta-Sigma Modulator in 0.13μm CMOS 2012.12 Phase 1
2nd year
1 A High Frequency Compensated Crosstalk and ISI Equalizer for Multi-Channel On-Chip Interconnect in 130nm CMOS 2012.06 Phase 1
1st year
1
Patent
No Title Country Date Phase
3 환경 정보 센서 회로 및 환경 정보 측정 장치 KR 2014-09-22 Phase 2
2nd year
2 후처리 공정 없이 표준 CMOS 공정만으로 제조 가능한 습도센서 KR 2013-10-17 Phase 2
1st year
1 연속적인 펄스를 이용한 시간 증폭 방법 및 이를 이용한 시간 증폭기 KR 2013-04-25 Phase 1
2nd year
1
Conference
No title Conference Name Date Phase
1 A 7b, 3.75ps Resolution Two-Step Time-to-Digital Converter in 65nm CMOS Using Pulse-Train Time Amplifier Symposia on VLSI Technology and Circuits 2012-06-12 Phase 1
1st year
1
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