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Songcheol Hong

2-4-3 Project Director

Project : Low power bi-static W-band UWB Radar Sensor on a Chip in CMOS process
Purpose ○ K-/W-band low power consuming, high resolution, and high accuracy CMOS radar sensor development for multi-functions including robot vision, traffic control, automotive anti-crash.
○ Development of CMOS power amplifier for LTE, WLAN, and IOT. Single-chip transceiver development by the CMOS power amplifier.
○ Development of inter/intra-chip communication module operating in the sub-terahertz region
○ Development of chemical sensor using resonator
Contents ○ K-/W-band UWB CMOS RADAR Sensor On a Chip development.
- 77-81 GHz high output power bi-phase pulse compression radar architecture proposal and its integrated circuits development.
- 77-81 GHz adaptive gain controlled low noise figure and high linearity receiver circuits and system development.
- TX leakage cancelling technique proposal for high sensitivity of radar sensors and the 22-26 GHz UWB radar sensor development.
○ Development of CMOS power amplifier for LTE, WLAN, and IOT.
- Proposal and Development of highly linear and efficient CMOS power amplifier for LTE.
- Proposal and Development of highly efficient CMOS Doherty power amplifier for LTE.
- Proposal and Development of highly linear and efficient CMOS power amplifier for WLAN(802.11ah).
- Proposal and Development of highly linear and efficient CMOS power amplifier for IOT(2.4GHz).
○ Development of inter/intra-chip communication module operating in the sub-terahertz region
- Development of envelope detector operating in sub-terahertz
- On-chip antenna development
- Study of matching method between envelope detector and on-chip antenna in sub-terahertz region
- Development of signal generator in sub-terahertz region.
○ Development of chemical sensor using resonator
- Study of meta-material resonator for sensitivity enhancement
- Development of resonator sensor platform
Expected Contribution ○ High cost-efficiency and high integration through the alteration from compound radar ICs to CMOS radar ICs in the near-future of radar markets.
○ Many parts of wireless transceiver are integrated as CMOS. But, power amplifier is integrated as compound such as GaN, GaAs by the reason of performance. This feature makes two chip transceiver so that price and size is not compatible. So, we expect CMOS single chip transceiver by the CMOS.
○ Using inter/intra-chip wireless signal transmission, we reduce the signal attenuation and enhance the data rate.
○ As develop chemical sensor detecting gas/liquid/solid, it can be applied to environment, car, security, health care fields. power amplifier will become competible.
Publication
No Title Year Phase
4 A W-Band High-Efficiency CMOS Differential Current-Reused Frequency Doubler 2015.05. Phase 2
2nd year
3 A K-Band CMOS UWB Four-Channel Radar Front-End With Coherent Pulsed Oscillator Array 2015.05. Phase 2
2nd year
2 Wireless Power Transfer Resonance Coupling Amplification by Load-Modulation Switching controller 2015.02. Phase 2
2nd year
1 Wireless Power Transfer Resonance Coupling Amplification by Load-Modulation Switching Controller 2015.02. Phase 2
2nd year
1
Patent
No Title Country Date Phase
 
Conference
No title Conference Name Date Phase
1 A digitally modulateed CMO6 Power Amplifier with102-dB Power Dynamic Range for a RF Polar Transmitter 2013 10th Internaional SoC Conference Chip Desighn Contes Session 2013-11-17 Phase 2
1st year
1
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