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Jun-Bo Yoon

1-2-2 Project Director

Project : Development of Ultra-Low Power Micro-electro-mechanical device
Purpose To secure the ultra-low power Micro-electro-mechanical(MEM) system taking the best advantage of novel MEM devices utilizing mass-producible CMOS compatible process.
Contents MEM switches have received widespread attention as promising candidates in the drive to surmount the physical limitations currently faced by complementary metal oxide semiconductor technology. The MEM switch has demonstrated superior characteristics including quasi-zero leakage behaviour, excellent density capability and operation in harsh environments. However, an unacceptably high operating voltage and poor reliability has posed a major obstacle in the practical use of the MEM switch in low-power integrated circuits. To utilize the MEM switch widely as a core device component in ultralow power applications, following works will be performed in this research.
First, the ultra-low power MEM device is fabricated through theoretical analysis, modeling and development of unit fabrication steps. To estimate the characteristics of the MEM device, the intermolecular forces existing in nano-scale are considered. Based on the theoretical analysis, the designed MEM device operating at below 1V is fabricated.
Next, the performance enhancement of the MEM device is performed. Novel beam designs and materials are incorporated into the MEMS device to achieve the operating voltage of 0.5 V and the speed of 0.1 ns. Moreover, novel contact materials are introduced into the MEM device to increase the reliability.
Then, ultra-low power memory and logic are produced based on the optimized NEM device utilizing accumulated know-hows in the structure of mechanical memory and logic. Finally, MEM system is demonstrated by applying the MEM device to each electrical component.
Expected Contribution The proposed ultra-low power MEM device is considered as the proper alternative of the CMOS based electrical system owing to its low static power consumption. Thus, basically it can be applied to fundamental electrical components such as memory and logic. Furthermore, since the structure of the MEM device is essential to the mechanical sensing, it can be utilized as a sensing system and an energy harvesting system.
Publication
No Title Year Phase
9 Increasing Capacitance and Self-Resonant Frequency of the MEMS Switched Capacitor Using High-κ TiO2 and SU-8 Bridged Beam Structure 2015.08. Phase 2
2nd year
8 High-Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT 2015.03. Phase 2
2nd year
7 A simple breathing rate-sensing method exploiting a temporarily condensed water layer formed on an oxidized surface 2015.02. Phase 2
2nd year
6 A Complementary Dual-Contact MEMS Switch Using a “Zipping” Techique 2014.06. Phase 2
1st year
5 A Sub-1-volt Nanoelectromechanical Switching Device 2013.01 Phase 1
2nd year
4 Complementary Dual-Contact Switch Using Soft and Hard Contact Materials for Achieving Low Contact Resistance and High Reliability Simultaneously 2013. Phase 2
1st year
3 An Electrostatically Actuated Stacked-electrode MEMS Relay with a Levering and Torsional Spring for Power Applications 2012.05 Phase 1
1st year
2 An Ultra-low Voltage MEMS Switch Using Stiction-recovery Actuation 2012.03 Phase 1
1st year
1 Metal-Oxide-Semiconductor Field Effect Transistor Humidity Sensor Using Surface Conductance 2012.03 Phase 1
1st year
1
Patent
No Title Country Date Phase
6 NANOPOROUS MEMBRANE AND MANUFACTURING METHOD THEREOF US 2014-09-16 Phase 2
2nd year
5 멤즈 가변 커패시터 KR 2014-01-29 Phase 2
1st year
4 표시 장치 및 그 제조 방법 KR 2013-11-15 Phase 2
1st year
3 습도센서, 습도 센싱 방법 및 이를 위한 트랜지스터 KR 2013-10-21 Phase 2
1st year
2 MEMS VARIABLE CAPACITOR USA 2013-06-25 Phase 1
2nd year
1 HUMIDITY SENSOR, HUMIDITY SENSING METHOD AND TRANSISTOR THEREFOR PCT 2012-02-15 Phase 1
1st year
1
Conference
No title Conference Name Date Phase
 
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