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Project Director Byung-Gook Park Year 2015.07.
Phase Phase 2 2nd year
Research Project 1-1 Ultra low-power/small nano device and reconfigurable 3D integration system
Title Resistive switching characteristics of silicon nitride-based RRAM depending on top electrode metals
Journal IEICE Transactions on Electronics
File 2-4.Resistive switching characteristics of silicon nitride-based RRAM depending on top electrode metals.pdf(1200370)
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