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논문

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주저자 박병국 게재년도 2015.05.
단계 2단계 2차년도
연구과제 1-1 초저전력 초소형 나노소자 및 집적 시스템
제목 Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
저널명 Applied Physics Letters
첨부파일 2-3.Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications.pdf(1318158)
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